copyright@ semipower electronic technology co., ltd. all rights reserved. dec. 2016. rev. 6.0 1 /7 SW7N65K n - channel enhanced mode to - 220f/to - 220sf/to - 251/ to - 252/to - 220 mosfet absolute maximum ratings symbol parameter value unit to - 220f/ to - 220sf to - 251 to - 252 to - 220 v dss drain to source voltage 650 v i d continuous drain current (@t c =25 o c) 7* a continuous drain current (@t c =100 o c) 4.4* a i dm drain current pulsed (note 1) 28 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 150 mj e ar repetitive avalanche energy (note 1) 7.6 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 22.4 152.6 148.8 161.7 w derating factor above 25 o c 0.18 1.22 1.19 1.29 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 220f/ to - 220sf to - 251 to - 252 to - 220 r thjc thermal resistance, junction to case 5.57 0.82 0.84 0.77 o c/w r thja thermal resistance, junction to ambient 49.1 81.9 56 o c /w *. drain current is limited by junction temperature. bv dss : 650v i d : 7a r ds(on) :0.5 ? 1 2 3 order codes item sales type marking package packaging 1 sw f 7n65k SW7N65K to - 220f tube 2 sw mn 7n65k SW7N65K to - 220sf tube 3 sw i 7n65k SW7N65K to - 251 tube 4 swd 7n65k SW7N65K to - 252 reel 5 swp 7n65k SW7N65K to - 220 tube 1. gate 2. drain 3. source to - 220f to - 251 to - 252 to - 220 1 2 3 features ? high ruggedness ? low r ds( on ) (t yp 0.5 ? )@v gs =10v ? low gate charge ( typ 21 nc) ? improved dv/dt capability ? 100% avalanche tested ? application: charge,led, pc power general description this power mosfet is produced with advanced technology of samwin. this technology enable the power mosfet to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. 1 2 3 1 2 3 1 2 3 1 2 3 to - 220sf
copyright@ semipower electronic technology co., ltd. all rights reserved. dec. 2016. rev. 6.0 2 /7 SW7N65K electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 650 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.4 v/ o c i dss drain to source leakage current v ds =650v, v gs =0v 1 ua v ds =520v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.5 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d =3.5a 0.5 0.6 ? g fs forward transconductance v ds =30v, i d =3.5a 4.8 s dynamic characteristics c iss input capacitance v gs =0v, v ds =200v, f=1mhz 638 pf c oss output capacitance 22 c rss reverse transfer capacitance 2.5 t d(on) turn on delay time v ds =325v, i d =7a, v gs =10v, r g =25? (note 4,5) 11 ns t r rising time 29 t d(off) turn off delay time 48 t f fall time 28 q g total gate charge v ds =520v, v gs =10v, i d =7a (note 4,5) 21 nc q gs gate - source charge 5 q gd gate - drain charge 10 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 7 a i sm pulsed source current 28 a v sd diode forward voltage drop. i s =7a, v gs =0v 1.4 v t rr reverse recovery time i s =7a, v gs =0v, di f /dt=100a/us 220 ns q rr reverse recovery c harge 2.4 uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l =33mh, i as = 3a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 7a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2%. 5. essentially independent of operating temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. dec. 2016. rev. 6.0 3 /7 SW7N65K fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. dec. 2016. rev. 6.0 4 /7 SW7N65K fig. 7 . maximum safe operating area (to - 220f/to - 220sf) fig. 9. maximum safe operating area(to - 252) fig. 8. maximum safe operating area(to - 251) fig. 10. maximum safe operating area(to - 220) fig. 11. c apacitance characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. dec. 2016. rev. 6.0 5 /7 SW7N65K fig. 14. transient thermal response curve(to - 252) fig. 13. transient thermal response curve(to - 251) fig. 12. transient thermal response curve (to - 220f/to - 220sf)
copyright@ semipower electronic technology co., ltd. all rights reserved. dec. 2016. rev. 6.0 6 /7 SW7N65K v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 17 . switching time test circuit & waveform fig. 16. gate charge test circuit & waveform fig. 15. transient thermal response curve(to - 220)
copyright@ semipower electronic technology co., ltd. all rights reserved. dec. 2016. rev. 6.0 7 /7 SW7N65K disclaimer * all the data & curve in this document was tested in xian semipower testing & application cente r. * this product has passed the pct,tc,htrb,htgb,hast,pc and solderdunk reliability testing. * qualification standards can also be found on the web site ( http://www.semipower.com.cn ) * suggestions for improvement are appreciated, please send your suggestions to samwin@samwinsemi.com fig. 19 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd fig. 18 . unclamped inductive switching test circuit & waveform
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